Sentaurus Device Editor New feature of Sentaurus TCAD Start with sde Can work in 2D and 3D modes Has functions for complicated shapes like circles, spheres etc. In command files or MDraw, these must be built up point-by-point, which is very inconvenient. Has a built-in command line, and can be controlled with scripts In 3D, easier than using mouse! In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO2) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swing (SS = 18.4 mV/dec) of NC-LTFET is obtained by the mechanism of line tunneling at low gate voltage instead of diagonal employing Sentaurus Device, different trap effects under the Schottky gate must be included to reproduce the measured transfer characteristics in subthreshold regime. Additionally, numerical simulation aspects for GaN-based HEMTs are also detailed. Keywords—TCAD, AlGaN/GaN HEMT on Si, trapping effects, Schottky gate This simulation software (Sentaurus TCAD) can only be executed in Linux operating system, so this chapter will start with instructions on how to establish a Linux operating system environ- ment under Windows environment following the sequence as shown below: 1. Downloading and installation of VMware Workstation. 2. Device structures and parameters. Fig. 1 shows the 2D cross-sectional view of DMD-DLTFETs. In the proposed device 'p' source and 'n' drain regions are formed by charge plasma concept, having lightly doping concentration of atom per cm 3.In the proposed device, the gate electrode is made of polysilicon with 4.68 eV work function. The numerical solutions of Poisson, drift-diffusion and carrier continuity equations are solved in a self-consistent approach. Various physical models have been invoked to analyze CSC solar cell's terminal characteristics accurately using Sentaurus TCAD software [].The thermionic emission model is employed at heterojunction interfaces, which defines the thermionic current and thermionic This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8 × 1 0 15 1 MeV n eq. ∕.